Infineon IRLR2905ZTRPBF N-Channel Power MOSFET: Datasheet, Pinout, and Application Circuits
The Infineon IRLR2905ZTRPBF is a highly efficient N-Channel Power MOSFET that leverages advanced HEXFET technology to deliver outstanding performance in a compact DPAK (TO-252) package. Designed for a wide range of power management applications, this component is renowned for its low on-state resistance (RDS(on)) and high switching speed, making it an ideal choice for designers seeking to improve efficiency and reduce heat generation in their circuits.
Key Datasheet Specifications
Critical parameters from the datasheet define the capabilities of this MOSFET. It boasts a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 42A at a case temperature (TC) of 25°C. Its most significant feature is an exceptionally low typical RDS(on) of just 9.0 mΩ at a gate-to-source voltage (VGS) of 10V. This low resistance directly translates to lower conduction losses and higher overall system efficiency. The device is also characterized by its fast switching speed, aided by a low gate charge (QG), and is avalanche rated, ensuring robustness and reliability in demanding environments.
Pinout Configuration
The IRLR2905ZTRPBF comes in the industry-standard DPAK surface-mount package. The pinout is straightforward:
1. Gate (G): This pin controls the conductivity between the drain and source. A voltage typically above 4V (the threshold voltage, VGS(th)) is required to turn the device on.
2. Drain (D): The main terminal for the load current, connected to the positive supply in a typical low-side switch configuration.
3. Source (S): The output terminal, usually connected to ground in a low-side switch setup.
The drain pin is connected to the large tab, which is crucial for effective thermal management. This tab must be soldered to a sufficient copper area (PCB pad) on the printed circuit board to act as a heatsink.
Application Circuits
The primary application for the IRLR2905ZTRPBF is as a low-side switch, where it is placed between the load and ground. This is a common configuration in:
DC-DC Converters: Its high efficiency and fast switching make it perfect for buck, boost, and synchronous rectifier circuits in switch-mode power supplies (SMPS).
Motor Control: Used in H-bridge configurations or for simple on/off control of brushed DC motors, solenoids, and relays.
Power Management Systems: Ideal for load switching, power distribution, and in-circuit protection due to its high current handling capability.
A basic low-side switching circuit involves connecting the load (e.g., a motor) between the positive supply (VCC) and the drain pin. The source pin is connected to ground. A gate driver IC or a simple transistor buffer circuit is used to provide a sharp, high-enough voltage (e.g., 5V, 10V, or 12V) to the gate pin to ensure the MOSFET turns on fully and quickly.
ICGOOODFIND: The Infineon IRLR2905ZTRPBF stands out as a superior component for power electronics, offering an exceptional balance of low resistance, high current capacity, and robust performance. Its versatility in switching and control applications makes it a go-to choice for engineers designing efficient and reliable power systems.
Keywords: Low RDS(on), Power MOSFET, DC-DC Converters, Motor Control, Low-Side Switch
