Infineon BAT68-04WH6327: High-Performance Silicon Schottky Diode for RF and Switching Applications

The Infineon BAT68-04WH6327 is a surface-mount silicon Schottky diode designed to deliver exceptional performance in radio frequency (RF) applications and high-speed switching circuits. As a critical component in modern electronics, this diode stands out due to its low forward voltage drop, ultra-fast switching speed, and minimal reverse recovery time, making it an ideal choice for applications where efficiency and signal integrity are paramount.

Engineered with precision, the BAT68-04WH6327 features a dual common-cathode configuration in a compact SOT-143 package, enabling designers to save valuable board space while maintaining high reliability. Its low capacitance and low series resistance are particularly advantageous in RF circuits, such as mixers, detectors, and samplers, where signal distortion must be minimized. Additionally, the diode’s excellent thermal stability ensures consistent performance across a wide temperature range, from -55°C to +150°C, making it suitable for harsh environments.

In switching applications, the BAT68-04WH6327 excels due to its fast response time, which reduces switching losses and improves overall system efficiency. This makes it a preferred component in power management circuits, clamping diodes, and freewheeling diodes in switched-mode power supplies (SMPS). The device’s high surge current capability further enhances its durability in demanding conditions.

ICGOODFIND Summary:

The Infineon BAT68-04WH6327 is a versatile and high-performance Schottky diode that offers superior RF characteristics and rapid switching capabilities, making it an excellent choice for advanced electronic designs requiring efficiency, speed, and reliability.

Keywords:

Schottky Diode, RF Applications, Fast Switching, Low Forward Voltage, SOT-143 Package