Infineon IDP20C65D2XKSA1: A 650V, 20A Dual CoolGaN™ Power Transistor in a TOLL Package
The relentless pursuit of higher efficiency, power density, and performance in power electronics is driving the widespread adoption of wide-bandgap semiconductors. At the forefront of this revolution is Infineon Technologies with its latest offering, the IDP20C65D2XKSA1, a robust GaN (Gallium Nitride) power transistor engineered to set new benchmarks.
This device integrates two independent 650 V, 20 A enhancement-mode (e-mode) GaN transistors in a single, compact package. The core technology, Infineon's proprietary CoolGaN™, is renowned for its superior material properties. Compared to traditional silicon, CoolGaN™ enables significantly lower switching losses and higher switching frequencies. This allows designers to drastically reduce the size of magnetic components like inductors and transformers, leading to a substantial increase in overall power density.
A key feature of the IDP20C65D2XKSA1 is its innovative TO-leadless (TOLL) package. This package is a critical enabler for high-performance designs. Its low-parasitic inductance is paramount for harnessing the full high-speed switching potential of GaN technology, minimizing voltage overshoots and ensuring stable operation. Furthermore, the package's top-side cooling capability provides an excellent thermal path to a heatsink, maximizing power dissipation and allowing for higher continuous output power in a minimal footprint. This combination makes it an ideal solution for space-constrained applications.
The integration of two transistors in one package offers significant advantages. It simplifies PCB layout, reduces the component count, and enhances system reliability. This dual configuration is perfectly suited for common power topologies such as half-bridge and full-bridge circuits, which are the backbone of modern switched-mode power supplies (SMPS) and motor drives.

Target applications are diverse and demanding, including:
High-efficiency server and telecom power supplies (PSU)
Industrial motor drives and automation systems
Solar inverters and energy storage solutions
Compact USB-PD adapters and ultra-fast chargers
ICGOOODFIND: The Infineon IDP20C65D2XKSA1 is a pivotal component that encapsulates the future of power conversion. By merging the high-performance benefits of CoolGaN™ technology with the mechanical and thermal advantages of the TOLL package, it provides a critical pathway for engineers to achieve unprecedented levels of efficiency and miniaturization in next-generation power systems.
Keywords: CoolGaN™, Power Density, TOLL Package, Switching Losses, Half-Bridge
