Infineon IPW60R055CFD7 650V CoolMOS™ CFD7 Power Transistor: Datasheet, Application Notes, and Features

The Infineon IPW60R055CFD7 is a state-of-the-art 650V superjunction MOSFET belonging to the revolutionary CoolMOS™ CFD7 family. This power transistor is engineered to deliver unmatched efficiency and robustness in a wide array of high-performance applications, including server and telecom SMPS (Switched-Mode Power Supplies), industrial motor drives, solar inverters, and EV charging infrastructure.

Key Features and Benefits

At the core of this device's performance is its superjunction (SJ) technology, which has been refined in the CFD7 generation to significantly minimize switching and conduction losses. The IPW60R055CFD7 boasts an extremely low typical on-state resistance (R DS(on)) of just 55 mΩ at a gate-source voltage of 10 V. This directly translates to higher efficiency, as less energy is wasted as heat during operation.

A defining characteristic of the CFD7 series is its integrated fast body diode. This feature is critical for hard-switching topologies like power factor correction (PFC) stages. The diode offers exceptional reverse recovery performance (Q rr, softness), which reduces switching noise (EMI) and minimizes stress on the MOSFET itself, leading to greater system reliability.

Furthermore, the device provides enhanced switching performance with low gate charge (Q G) and low effective output capacitance (C OSS(eff)). This allows for higher switching frequencies, enabling designers to reduce the size and cost of passive components like magnetics and capacitors. The transistor is also designed for ease of paralleling, making it an excellent choice for high-current applications.

Datasheet Overview

The official datasheet is the ultimate source of information for design-in. It provides all necessary absolute maximum ratings and electrical characteristics, including voltage, current, and thermal limitations. Key graphs detail the behavior of R DS(on) over temperature, switching characteristics, and diode recovery times. Crucially, the datasheet contains SOA (Safe Operating Area) graphs that are essential for ensuring reliable and robust circuit design under all conditions.

Application Notes and Design Support

Successful implementation of any high-power MOSFET requires careful design. Infineon provides extensive application notes, design guides, and simulation models (SPICE) to support engineers. Key design considerations highlighted in these resources include:

Gate Driving: Ensuring a strong and clean gate drive signal with appropriate turn-on/off speeds is vital for maximizing performance.

Layout: A proper PCB layout with low parasitic inductance is mandatory to minimize voltage spikes and ensure stable operation.

Thermal Management: Despite its high efficiency, effective heat sinking is necessary to keep the junction temperature within specified limits.

ICGOODFIND Summary

The Infineon IPW60R055CFD7 CoolMOS™ CFD7 represents a peak in high-voltage power MOSFET technology. Its blend of ultra-low R DS(on), the integrated fast body diode, and superior switching characteristics makes it a premier choice for designers aiming to push the boundaries of power density, efficiency, and reliability in modern electronic systems.

Keywords:

CoolMOS™ CFD7

Superjunction MOSFET

Integrated Fast Diode

Low RDS(on)

High-Efficiency Switching