Infineon IKW20N60H3: A High-Efficiency 600V TRENCHSTOP™ IGBT for Switching Applications
The demand for energy-efficient and robust power switching solutions continues to grow across industries such as industrial drives, renewable energy systems, and consumer appliances. Addressing this need, the Infineon IKW20N60H3 stands out as a high-performance 600V IGBT that leverages advanced TRENCHSTOP™ technology to deliver superior efficiency and reliability in switching applications.
This IGBT is engineered to minimize both conduction and switching losses, a critical requirement for systems operating at medium frequencies. The low saturation voltage (Vce(sat)) ensures reduced power dissipation during the on-state, while the fast switching capabilities enhance performance in circuits like PWM inverters, power factor correction (PFC) stages, and uninterruptible power supplies (UPS). The device’s trench gate structure not only improves overall conductivity but also offers improved short-circuit robustness.
Another highlight of the IKW20N60H3 is its positive temperature coefficient, which simplifies the paralleling of multiple IGBTs for higher current applications. The integrated anti-parallel emitter-controlled diode provides enhanced reverse recovery characteristics, contributing to lower electromagnetic interference (EMI) and safer commutation.
Housed in a TO-247 package, the device offers excellent thermal performance, making it suitable for high-power-density designs where effective heat management is essential. Its overall balance of low losses, high durability, and ease of use makes it a preferred choice for designers aiming to improve system efficiency without compromising on size or cost.
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The Infineon IKW20N60H3 is an optimal solution for high-efficiency power switching, combining low losses, thermal stability, and robustness thanks to its TRENCHSTOP™ architecture.
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Keywords:
TRENCHSTOP™ Technology, Low Saturation Voltage, Fast Switching, Positive Temperature Coefficient, High Efficiency
